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CPC5602
I NTEGRATED C IRCUITS D IVISION
N-Channel Depletion Mode FET
Parameter
Drain-to-Source Voltage - V DS
Max On-Resistance - R DS(on)
Max Power
Rating
350
14
2.5
Units
V
?
W
Description
The CPC5602 is an N-channel depletion mode Field
Effect Transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third generation vertical
DMOS process. The third generation process realizes
world class, high voltage MOSFET performance
Features
? 350V Drain-to-Source Voltage
? Depletion Mode Device Offers Low R DS(on)
at Cold Temperatures
? Low On-resistance: 8 ? (Typical) @ 25°C
? Low V GS(off) Voltage: -2.0V to -3.6V
? High Input Impedance
? Low Input and Output Leakage
? Small Package Size SOT-223
? PC Card (PCMCIA) Compatible
? PCB Space and Cost Savings
Applications
? Support Component for LITELINK?
Data Access Arrangement (DAA)
? Telecommunications
in an economical silicon gate process. The vertical
DMOS process yields a highly reliable device,
particularly in difficult application environments such
as telecommunications, security, and power supplies.
One of the primary applications for the CPC5602 is
as a linear regulator/hook switch for the LITELINK
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5602 has a typical on-resistance of 8 ? , a
drain-to-source voltage of 350V, and is available in an
SOT-223 package. As with all MOS devices, the FET
structure prevents thermal runaway and
thermal-induced secondary breakdown.
Ordering Information
? Normally On Switches
Part #
Description
? Ignition Modules
? Converters
? Security
? Power Supplies
CPC5602C N-Channel Depletion Mode FET, SOT-223 Pkg.
Cut-Tape, Available in Quantities of 200, 400,
600, and 800 Only (see Note 1)
CPC5602CTR N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/Reel)
Note 1: Orders for 1000 or greater must be for the "CTR" part option
and in increments of 1000.
Package Pinout
D
4
1
G
2
D
3
S
Pin Number Name
1 GATE
2 DRAIN
3 SOURCE
4 DRAIN
Pb
e 3
DS-CPC5602-R09
www.ixysic.com
1
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相关代理商/技术参数
CPC5602CTR 功能描述:MOSFET N Channel Depletion Mode FET, T/R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
CPC5603 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:N-Channel Depletion Mode FET
CPC5603_12 制造商:CLARE 制造商全称:Clare, Inc. 功能描述:N-Channel Depletion Mode FET
CPC5603C 功能描述:MOSFET N Channel Depletion Mode FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
CPC5603CTR 功能描述:MOSFET N Channel Depletion Mode FET, T/R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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